| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalizing method in which crystal grains of large size can closely be formed with low power at high temperature. SOLUTION: Based upon initial data including at least characteristics of phase-modulated laser light, properties and film thicknesses of cap films, and properties and a film thickness of a film to be crystallized and experimentation, data on correlation between the fluence of incident light of modulated laser light and the film thicknesses of the cap films for state change of a non-single-crystal semiconductor film after irradiation are generated. Based upon the correlation data, film thicknesses of cap films are selected respectively, and the non-single-crystal semiconductor film is irradiated with laser light having selected fluence of the incident light from the side of a cap film having a selected film thickness, fused, and crystallized to laterally grow its crystal grains. COPYRIGHT: (C)2006,JPO&NCIPI
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