| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory with a sufficient data retention characteristic and to provide manufacturing technology. SOLUTION: A gate electrode 7A, a contact hole 17 which is opened in a region where a p-type well 4 and an n-type well 5 are separated in a plane and reaches a silicon oxide film 3 in an element separation groove 2, a plug 22 arranged in the contact hole 17, and wiring 25 which is electrically connected to the plug 22, are formed. Thus, the plug 22 and wiring 25 connected to the plug 22 are set to be floating gate electrodes. The gate electrode 7A is set to be a control gate electrode, and a thick silicon oxide film 3 below the plug 22 is set to be a tunnel insulating film in a non-volatile storage element. COPYRIGHT: (C)2006,JPO&NCIPI
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