SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which has the lower input resistance of a gate in comparison with a silicon carbide semiconductor device in which a gate layer is formed with an ion implantation method, and also has a JFET having higher voltage resistance between the gate and a drain, and to provide a manufacturing method of the same silicon carbide semiconductor device. SOLUTION: The semiconductor substrate 1 in which an n-type drift layer 6 and an n+type semiconductor layer 7 are sequentially formed on an n+type substrate 5 is prepared. A trench 8 is also formed in a depth reaching the n-type drift layer 6 from the surface of the n+type semiconductor layer 7. Subsequently, a p-type gate layer 9 of a shape along the internal wall of the trench 8, namely, a U-shape is formed on the internal wall of the trench 8. Thereafter, the trench 8 is closed with a side wall 12 and an embedded insulating film 13 by forming metal 11 for gate wiring to the internal side of the trench 8. Thereafter, an interlayer insulating film 14 and a source electrode 16 are formed on the surface of the semiconductor substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI