发明名称 MOS capacitor with reduced parasitic capacitance
摘要 A capacitor including a first active layer capacitively coupled to a second active layer, the second active layer being capacitively coupled to a third layer, the third layer being capacitively coupled to a fourth layer, wherein an anode of the capacitor is connected to one of the first and second active layers, and a cathode of the capacitor is connected to the other one of the first and second active layers, and wherein the third layer is left floating. The fourth layer may be connected to a supply voltage, such as but not limited to, ground.
申请公布号 US2005269619(A1) 申请公布日期 2005.12.08
申请号 US20040862405 申请日期 2004.06.08
申请人 SHOR JOSEPH S;MAAYAN EDUARDO;BETSER YORAM 发明人 SHOR JOSEPH S.;MAAYAN EDUARDO;BETSER YORAM
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L27/08;H01L29/94;(IPC1-7):H01L27/108 主分类号 H01L27/04
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