Flip chip type nitride semiconductor light-emitting diode

摘要

The present invention provides a flip chip type nitride semiconductor light-emitting diode comprising a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.