METHOD FOR ETCHING DOPED POLYSILICON WITH HIGH SELECTIVITY TO UNDOPED POLYSILICON,申请号KR20017012688-传众专利搜索

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发明名称	METHOD FOR ETCHING DOPED POLYSILICON WITH HIGH SELECTIVITY TO UNDOPED POLYSILICON
摘要
申请公布号	KR100535603(B1)	申请公布日期	2005.12.08
申请号	KR20017012688	申请日期	2001.10.05
申请人		发明人
分类号	H01L21/3063;(IPC1-7):H01L21/306	主分类号	H01L21/3063
代理机构		代理人
主权项
地址

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