| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved ESD protection circuit for raising a breakdown voltage and improving test conditions. <P>SOLUTION: A relatively small ESD protection diode is formed on the same chip as a light emitting diode. In an embodiment, the ESD diode is a mesa-type diode isolated from a light emitting diode by a trench. To reduce the series resistance of the ESD diode, the PN junction and metal contact with a semiconductor material are made long and expanded virtually all over the width of the chip. Various configurations of the PN junction and the N and P metal contacts for the ESD diode are described for increasing the breakdown voltage and for improving test conditions. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
