| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device manufacturing method wherein misalignment between a tunnel diffusion region and a tunnel window is suppressed without enlargement of the device. <P>SOLUTION: The semiconductor memory device manufacturing method comprises an oxide film formation step wherein an oxide film 2 is formed on a semiconductor substrate 1; a LOCOS formation step wherein a LOCOS region 4 is formed on the semiconductor substrate 1, and the oxide film 2 in regions surrounded by the LOCOS region 4 is formed into a gate region G and a first alignment key K; a window forming step wherein mask alignment is performed by using the first alignment key K, a tunnel window 6 is formed in the gate region G, and a second window 6a is formed in the first alignment key K (or in the region K formed in the preceding step); and a step wherein mask alignment is performed by using the second window 6a as a second alignment key Ka and a tunnel diffusion region 5 is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
