| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a higher integration density and a method for manufacturing the same, and to provide a semiconductor device having a high integration density and multiple functions. SOLUTION: The semiconductor device 1 has a laminated structure wherein a plurality of semiconductor chips 2 and 3 are laminated, and also has a plurality of ball chips 5 sandwiched in between the semiconductor chips 2 and 3. The ball chips 5, each having an electronic circuit formed therein, are fitted into curved recesses 4 with the semiconductor chip 2 or 3 mounted therein. In another example, the ball chips 5 are fitted onto pads 10 provided on the semiconductor chip 2 or 3. COPYRIGHT: (C)2006,JPO&NCIPI
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