| 摘要 |
A low mesa embedded element structure on a p-type substrate has high element characteristics, and to improve manufacturing yield and run-to-run reproducibility, a cross-sectional shape prior to growing an element contact layer, namely, that after growing an over clad layer, is flattened to an extent where crystallinity of the contact layer is not affected. On a p-type semiconductor substrate (1), a stripe-shaped laminate composed of at least a p-type clad layer (2), an active layer (4) and an n-type clad layer (6) is provided. Both sides of the laminate are embedded in a current block layer (8), and on the current block layer (8) and the laminate, an n-type over clad layer (9) and an n-type contact layer (10) are arranged. The n-type over clad layer (9) is a semiconductor crystal which flattens unevenness of the top planes of the current block layer (8) and the laminate. |
