| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming insulating film of semiconductor device which can be manufactured by preventing the occurrence of pinch-off in formation of a wire-to-wire insulating film, and reducing undulation over the interlayer insulating film even when ultra-fine wires are laid. SOLUTION: A lyophilic film 14 is formed at the surface of substrate and the wiring surface. The lyophilic film 14 forms, for example, an oxide film through oxygen plasma at the substrate surface and wiring surface. Since wettability can be improved by forming the lyophilic film 14, the SOG liquid coated thereafter can easily flow into a groove between the wires to fill the region between the wires, and undulation of a wiring pattern can be alleviated. COPYRIGHT: (C)2006,JPO&NCIPI
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