Semiconductor laser device

摘要

A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type Al_xGa_1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlGaInP second upper cladding layer is identical to a ratio of an etching rate for dry etching of the p-type GaAs cap layer and the p-type Al_xGa_1-xAs (X=0.550) second cladding layer to an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlGaInP second upper cladding layer.