发明名称 |
Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen |
摘要 |
A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3). <IMAGE> |
申请公布号 |
DE69333722(T2) |
申请公布日期 |
2005.12.08 |
申请号 |
DE1993633722T |
申请日期 |
1993.05.31 |
申请人 |
STMICROELECTRONICS S.R.L., AGRATE BRIANZA |
发明人 |
BACCHETTA,MAURIZIO;BACCI,LAURA;ZANOTTI,LUCA |
分类号 |
H01L29/78;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L23/31;H01L23/532;(IPC1-7):H01L21/316;H01L23/29 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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