发明名称 Semiconductor memory device
摘要 A column switch in a two-port SRAM (static random access memory) is provided with A-port switches, B-port switches, and inter-port switches. When it is detected that an A-port row address and a B-port row address match each other, all of the B-port switches are turned off, and an A-port bit line pair for a column selected according to A-port column decode signals is coupled to an A-port data line pair, while an A-port bit line pair for a column selected according to B-port column decode signals is coupled to a B-port data line pair.
申请公布号 US2005270885(A1) 申请公布日期 2005.12.08
申请号 US20050143659 申请日期 2005.06.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MASUO AKIRA
分类号 G11C11/41;G11C8/00;G11C11/412;G11C11/413;(IPC1-7):G11C8/00 主分类号 G11C11/41
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