| 摘要 |
A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The transistor also includes a first conductivity type contact region provided in the second conductivity type channel diffusion region, and an electrode wiring connected to the first conductivity type source contact region and second conductivity type source contact region. A surface insulating film is provided on the second conductivity type channel diffusion region. A plurality of linear gate electrodes are provided on the surface insulating film. The gate electrodes are parallel to each other. The spacing between the gate electrodes is less than the thickness of the surface insulating film.
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