发明名称 |
SHORT WAVELENGTH DIODE-PUMPED SOLID-STATE LASER |
摘要 |
A diode-pumped solid-state laser including a short wavelength (e.g., due, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er<3+> Sm<3+> Eu<3+>, Tb<3+>, D<3+> Tm<3+>, Ho<3+>, and Pr<3+>. A laser diode pump source has a wavelength in the range of about 365nm to 480nm to excite a laser emission in the range of 370 to 800nm. The laser diode pump source may comprise a GaNbased semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370-380nm, 400-415nm, 435-445nm, or 468-478nm. |
申请公布号 |
WO2005117216(A2) |
申请公布日期 |
2005.12.08 |
申请号 |
WO2005US19065 |
申请日期 |
2005.05.25 |
申请人 |
MELLES GRIOT, INC.;TAKEUCHI, ERIC, B.;HARGIS, DAVID, E. |
发明人 |
TAKEUCHI, ERIC, B.;HARGIS, DAVID, E. |
分类号 |
H01S3/06;H01S3/067;H01S3/08;H01S3/0941;H01S3/10;H01S3/16;H01S5/323 |
主分类号 |
H01S3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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