发明名称 SHORT WAVELENGTH DIODE-PUMPED SOLID-STATE LASER
摘要 A diode-pumped solid-state laser including a short wavelength (e.g., due, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er<3+> Sm<3+> Eu<3+>, Tb<3+>, D<3+> Tm<3+>, Ho<3+>, and Pr<3+>. A laser diode pump source has a wavelength in the range of about 365nm to 480nm to excite a laser emission in the range of 370 to 800nm. The laser diode pump source may comprise a GaN­based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370-380nm, 400-415nm, 435-445nm, or 468-478nm.
申请公布号 WO2005117216(A2) 申请公布日期 2005.12.08
申请号 WO2005US19065 申请日期 2005.05.25
申请人 MELLES GRIOT, INC.;TAKEUCHI, ERIC, B.;HARGIS, DAVID, E. 发明人 TAKEUCHI, ERIC, B.;HARGIS, DAVID, E.
分类号 H01S3/06;H01S3/067;H01S3/08;H01S3/0941;H01S3/10;H01S3/16;H01S5/323 主分类号 H01S3/06
代理机构 代理人
主权项
地址