METHOD FOR FORMING FINE PARTICLE ARRAY ON SUBSTRATE AND SEMICONDUCTOR ELEMENT

摘要

A method for forming a fine particle array on a substrate, which comprises fixing metal oxide particles (Fe2O3 fine particles)(104) on a p-type silicon semiconductor substrate (101), embedding the metal oxide particles within an oxidized silicon film (106), and subjecting the resultant particles to heat treatment in a reducing gas atmosphere, to thereby form reduced fine particles (FeO fine particles)(107). The re-oxidation of the reduced fine particles (FeO fine particles)(107) through the exposure to the atmosphere can be inhibited by the presence of the oxidized silicon film (106). The above method allows the formation of fine particles on a substrate, wherein the re-oxidation of the reduced fine particles is inhibited.