Electronic storage component, formed by producing a crystalline silicon wall and a polysilicon wall on a substrate, covering the walls, forming troughs, and applying an insulating layer

摘要

A process for producing an electronic storage component circuit on a semiconductor, comprises forming a crystalline silicon wall (9) on a substrate (8), and a parallel polysilicon wall (10). The walls are covered with a cover material (19) and a primary trough (20) is formed between the walls. The trough is filled with a primary filling layer, and a second trough is formed and filled with a third material. The primary insulating layer forms a gate oxide.