| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a PCMO device having a reversible resistance switch property according to a unipolar or bipolar voltage pulse, and a formation method of a PCMO thin film. <P>SOLUTION: In a formation method of a PCMO (Pr<SB>0.3</SB>Ca<SB>0.7</SB>MnO<SB>3</SB>) thin film having a crystal state associated with a memory resistance property, a step of forming a PCMO thin film having a first crystal state, and a step of changing a resistance condition of the PCMO thin film by using pulse polarity according to the first crystal state. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
