| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pn-junction compound semiconductor light emitting diode including a p-type boron-phosphide-based semiconductor layer by which an LED with a lower forward voltage is stably provided. <P>SOLUTION: The light emitting diode is constituted using the p-type boron-phosphide-based semiconductor layer 106 of low resistance which is formed on a p-type Group III nitride semiconductor layer 105 formed above a crystal substrate 100 through a thin-film layer composed of a hexagonal Group III nitride semiconductor. In particular, the diode is constituted using the (111) boron-phosphide-based semiconductor layer 106 which is excellent in matching with the (0001) surface of the Group III nitride semiconductor thin-film layer 105. In addition, it is preferable in obtaining the LED with a stable light emitting wavelength to constitute the boron-phosphide-based semiconductor layer 106 as an undoped layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
