| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a connection structure which is very low-cost, short in TAT, and superior in connection reliability as to a method of connecting a plurality of semiconductor chips in three dimensions with the shortest wire length by using a penetration electrode to realize a small-sized semiconductor system having high density and a high function. <P>SOLUTION: A semiconductor chip reverse surface is made thin by back grinding etc., up to a specified thickness, a hole which reaches a surface layer electrode is formed by dry etching at a reverse-surface position corresponding to a device-side external electrode, and a metallic plating film is formed on the side wall of the hole and the periphery on the reverse-surface side; and a metallic bump (projecting electrode) of another semiconductor chip to be laminated on an upper-stage side is deformed and injected into the through hole with the metallic plating film, and the metallic bump is electrically connected to an inner side of a through hole formed in an LSI chip by geometrical caulking. Consequently, the unique connection structure having high reliability can be realized by the low-cost and short-TAT process through the caulking operation using plastic liquid deformation of the metallic bump. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
