METHOD FOR MANUFACTURING INDICATING DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain an indicating device which has TFT circuits of distinct property on the same substrate without increasing the number of processes. SOLUTION: A method for manufacturing an indicating device is provided. The indicating device is provided with a first TFT which is formed on a first region on the substrate and has first threshold by dope of first dopant to a semiconductor layer of a channel region, and a second TFT which is formed on a second region on the substrate and has second threshold different from the first threshold by dope of second dopant to the semiconductor layer of the channel region. Melting treatment of the semiconductor layer of the second region is performed in the state that the second dopant is spread on a layer upper than the semiconductor layer, so that a crystallization semiconductor layer used for the channel region of the second TFT is obtained. COPYRIGHT: (C)2006,JPO&NCIPI