| 摘要 |
PROBLEM TO BE SOLVED: To provide epitaxial growth apparatus in which flow of purge gas to be flown into a communication channel is controlled, deposition of bi-products on an upper wall face of the communication channel is suppressed, and amount of generation of particles on a semiconductor wafer is reduced, and consequently amount of generation of LPD is reduced. SOLUTION: A communication channel 11 is provided between a transfer chamber 13A and a reaction chamber 12. A plurality of nozzles 14 for injecting purge gas are provided on an upper wall face of the communication channel 11. In the communication channel 11, a guide member 15 for flowing the purge gas along an upper wall face of the member is provided. Thus, the injected purge gas is struck to the guide member 15, and then flown along the upper wall face of the communication channel 11. Accordingly, bi-products hardly adhere to the upper wall face of the communication channel 11. As a result, generation of LPD on a surface of a silicon wafer W is reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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