| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device containing a capacity element in which, even if a conductive film for an upper electrode is formed on a capacity film serving as an insulating film by a method using a plasma, the capacity film is not subjected to a dielectric breakdown by an electric charge generated by the plasma, wherein a yield of the semiconductor device containing the capacity element is enhanced. SOLUTION: This method comprises a first conductive film forming step of forming a first conductive film 13 serving as a lower electrode on a substrate 10; an insulating film forming step of forming an insulating film 14 serving as a capacity insulating film on the first conductive film 13, so as to expose at least a part of a surface of the first conductive film 13; and a second conductive film forming step of removing an electric charge 19 accumulated on a second conductive film 18, while forming the second conductive film 18 serving as an upper electrode on the insulating film 14 by a method using the plasma. The insulating film forming step contains a step of exposing the first conductive film 13 which exists in a boundary region of a plurality of element forming regions on the substrate 10. COPYRIGHT: (C)2006,JPO&NCIPI
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