| 摘要 |
An atomic layer deposition apparatus for depositing a plurality of ultra-thin layers onto an epitaxial substrate comprises first and second chambers each having an inlet for a gas to be adsorbed on an epitaxial substrate, a transport chamber disposed between the first and second chambers, a loading chamber connected to the transport chamber for storing, loading and unloading epitaxial substrates, an outer chamber enclosing the first, second and transport chambers and at least partially enclosing said loading chamber, and means for individually heating the chambers and evacuating the chambers to ultra high vacuum pressures. An atomic layer deposition process comprises moving an epitaxial silicon substrate from a transport chamber to a first chamber and introducing a gas for formation of a first, adsorbed atomic layer, transferring the substrate through the transport chamber and into the second chamber and introducing a silicon-containing gas for formation of a second, ultra-thin epitaxial silicon layer, and maintaining different temperatures in the first and second chambers.
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