发明名称 Method for manufacturing an electrooptical device
摘要 An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device. Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.
申请公布号 US2005269639(A1) 申请公布日期 2005.12.08
申请号 US20050204000 申请日期 2005.08.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN
分类号 G02F1/1362;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L31/039 主分类号 G02F1/1362
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