发明名称 |
Method for manufacturing an electrooptical device |
摘要 |
An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device. Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.
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申请公布号 |
US2005269639(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20050204000 |
申请日期 |
2005.08.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L31/039 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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