| 发明名称 |
Trench type semiconductor device with reduced Qgd |
| 摘要 |
A trench type power semiconductor device which includes a buried electrode that is electrically connected to an electrode that can be biased to reach a voltage other than any of the other power electrodes.
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| 申请公布号 |
US2005269630(A1) |
申请公布日期 |
2005.12.08 |
| 申请号 |
US20050142034 |
申请日期 |
2005.06.01 |
| 申请人 |
CAO JIANJUN |
发明人 |
CAO JIANJUN |
| 分类号 |
H01L21/336;H01L29/40;H01L29/417;H01L29/423;H01L29/74;H01L29/78;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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