SEMICONDUCTOR PRODUCING DEVICE AND SEMICONDUCTOR PRODUCING METHOD

摘要

A cylindrical electrode (215) and a cylindrical magnet (216) are installed outside a processing furnace (202) for an MMT device, and a susceptor (217) for holding a wafer (200) is installed inside the processing chamber (201) of the processing furnace. Installed in the processing furnace are a shower head (236) for shower- wise blowing a clean gas against the wafer, and a gate valve (244) for carrying the wafer into and out of the processing chamber. A high frequency electrode (2) and a heater (3) are installed in the susceptor (217) with clearances defined between them and the wall defining the space. The presence of the clearances between the high frequency electrode and heater and the wall defining the susceptor space ensures that even if thermal expansion differences between the high frequency electrode and heater and the susceptor occur, damage to the high frequency electrode and heater can be prevented.