MANUFACTURING METHOD OF FIELD EMISSION TYPE ELECTRON SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electron source capable of extending its service life by considering a condition in a nano-crystallization process.

SOLUTION: The nano-crystallization process is carried out by bringing a principal surface of a semiconductor layer 4' formed of non-doped polycrystalline silicon into contact with an electrolytic solution 11 through a processing hole 10a formed in the bottom of a processing bath 10 with the electrolytic solution 11 introduced therein, and by carrying a current between an in-solution electrode 12 immersed in the electrolytic solution 11 and a lower electrode 2 provided for the semiconductor layer 4'. The electrolytic solution 11 used for the nano-crystallization process is a liquid mixture selected from a range of 1:0.4 to 1:1 by a mass ratio before mixing hydrofluoric acid, ethanol and water, and current density in the nano-crystallization is set at a value selected from the range of 20-100 mA/cm2.

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