| 摘要 |
PROBLEM TO BE SOLVED: To improve saturation output and gate breakdown strength in a hetero junction field effect semiconductor device. SOLUTION: In a hetero field effect transistor, an n-InGaAs layer 16 is formed on the surface of a semi-insulating GaAs substrate 12 as a channel layer; a barrier layer 18 consisting of an i-AlGaAs layer 18a, a p-AlGaAs layer 18b which is formed in a substantially completely depleted state, and an i-AlGaAs layer 18c is arranged on the n-InGaAs layer 16; and a gate electrode 20 Schottky jointed to the barrier layer 18 is arranged on the barrier layer 18. Since the barrier height of the barrier layer 18 is heightened by the p-type semiconductor layer as compared with a Schottky barrier, a flow of a forward gate current can be suppressed, the extension of the depletion layer to the drain side is increased at the time of reverse bias between the gate and the drain and gate breakdown strength can be improved. COPYRIGHT: (C)2006,JPO&NCIPI
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