| 发明名称 |
Dual damascene integration structure and method for forming improved dual damascene integration structure |
| 摘要 |
Methods of densifying a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.
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| 申请公布号 |
US2005272237(A1) |
申请公布日期 |
2005.12.08 |
| 申请号 |
US20050143831 |
申请日期 |
2005.06.02 |
| 申请人 |
EPION CORPORATION |
发明人 |
HAUTALA JOHN J.;BOOK GREG |
| 分类号 |
H01L21/26;H01L21/302;H01L21/306;H01L21/3105;H01L21/311;H01L21/324;H01L21/42;H01L21/44;H01L21/477;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/26 |
| 代理机构 |
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