| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which large capacity data can be recorded. <P>SOLUTION: An MRAM 10 is constituted by making one memory cell comprise 2 MTJ elements 1 and 2 and a single MOS transistor 8, and arranging the respective MTJ elements 1 and 2 at the intersection positions of 2 word lines 4a and 4b corresponding to each of them and one common bit line 3 common to both of them. A magnetic field is generated by making current flow through the word lines 4a and 4b and the common bit line 3, and the spin arrangement of the respective MTJ elements 1 and 2 is varied by the composed magnetic field. Thus, three kinds of states where both of the MTJ elements 1 and 2 are low resistance, either of them is low resistance, or both of them are high resistance can be created, so that data of 3 values can be handled on 1 memory cell to improve recording density. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
