| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device by which a high-performance thin film transistor having sufficient source-drain breakdown voltage is obtained. SOLUTION: The method comprises a starting point forming process for forming a starting point (125) on a substrate (11), a semiconductor film forming process for forming a semiconductor film of a film thickness t (μm) on the substrate where the starting point is formed, a heat treatment process for performing heat treatment to the semiconductor film to form mono-crystal grains with the starting point part (125) nearly as the center, a patterning process for patterning the semiconductor film to form a transistor area (133), and an element forming process for forming a gate insulation film (14) and a gate electrode (15) on a transistor area to form the thin film transistor of a channel length L (μm). In the semiconductor film forming process and the element forming process, the semiconductor film and the thin film transistor are formed so that the film thickness (t) of the semiconductor film and the channel length L may meet 7*t≤L. COPYRIGHT: (C)2006,JPO&NCIPI |
