| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel Si-containing film-forming material, particularly a material for a low dielectric constant insulating film which contains a cyclic siloxane compound and is suitable for a PECVD (plasma enhanced chemical vapor deposition) apparatus, and an Si-containing film using the same, and a semiconductor device containing the film. SOLUTION: The Si-containing film-forming material comprises the cyclic siloxane compound represented by formula (1) (wherein R<SP>1</SP>, R<SP>2</SP>, and R<SP>3</SP>are each a 1-10C hydrocarbon group or R<SP>1</SP>, R<SP>2</SP>, and R<SP>3</SP>may be bonded to one another to form a 3-20C cyclic structure; R<SP>4</SP>is a 1-20C hydrocarbon group or hydrogen; (n) is 1 or 2; and (p) is an integer of 2-10). COPYRIGHT: (C)2006,JPO&NCIPI |
