SWITCHING CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a switching circuit which can prevent deterioration in the insulation property of a high frequency signal and in a harmonic distortion characteristic thereof even when employing a multigate FET and can have a small insertion loss in its ON state. SOLUTION: In a high frequency switching circuit of a two-input/one-output type including first and second FET's 101 and 102 each as a multigate FET having three gates; a first control wiring line 701 connects a first gate 51A to a third gate 51C of the first FET 101 and intergate regions 402A and 402B of the second FET 102. A second control wiring line 702 connects a first gate 52A to a third gate 52C of the second FET 102 and intergate regions 401A and 401B of the first FET 101. COPYRIGHT: (C)2006,JPO&NCIPI