| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device for suppressing electromagnetic radiation caused by oscillation, and for preventing the deterioration of the efficiency of charge feeding at the time of carrying out on-chip de-coupling. SOLUTION: This semiconductor integrated circuit 10 is constituted of an inverter circuit 12 and a capacitor 14, and the inverter circuit 12 is a CMOS inverter constituted by connecting a pMOS 16 with an nMOS 18. The capacitor 14 is constituted so that a dielectric 38 can be interposed between a pair of electrodes constituted of electrodes 36A and 36B. The electrode 36A is connected to a p diffusion region 24A and n diffusion region 44 of a pMOS 16 and a VDD terminal 46 for a power source input. The electrode 36B is connected to an n diffusion region 30B, p diffusion region 48 of the nMOS 18, and a VSS terminal 50 for the ground. The electrodes 36A and 36B are formed of materials with losses larger than that of metal or polysilicon to be used as materials of normal electrodes. COPYRIGHT: (C)2006,JPO&NCIPI
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