| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor that dispenses with the alignment among a gate electrode, a source electrode, and a drain electrode, and can obtain both of a high on/off ratio and high-speed operation even if finishing dimensions deviate, and to provide a method for manufacturing the field effect transistor. SOLUTION: In the field effect transistor having the source electrode 2 and the drain electrode 3 via an insulating layer 5 and an active layer 4 on the gate electrode 1, a recessed groove in an inverted trapezoidal shape is formed at the surface section of the active layer 4, and the source electrode 2 and the drain electrode 3 are formed on one inclined plane and the other inclined one of the recessed groove in an inverted trapezoidal shape, respectively. As its manufacturing method, the recessed groove in an inverted trapezoidal shape is formed by selectively removing one portion of the active layer, resin is formed so that the active layer including the recessed groove is covered, and only resin at the inclined plane section of the recessed groove in an inverted trapezoidal shape is removed, for example, by ashing the resin, thus forming the source and drain electrodes at the inclined plane section. COPYRIGHT: (C)2006,JPO&NCIPI
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