发明名称 CRYSTAL GROWING UNIT
摘要 PROBLEM TO BE SOLVED: To provide a crystal growing unit for obtaining a single crystal of potassium nitride by sodium flux method in which a high quality great crystal can be grown. SOLUTION: In this method, a crystal growing unit comprises a weighing part 1 where the masses of metal sodium and gallium are measured by a weighing device 8 and a growing part 2 where those starting materials are melted in a heating vessel 21, and the gallium nitride is grown by reacting a seed crystal with the mixed melt made by dissolving nitrogen gas introduced from a pipe 22, and in the weighing part 1, measuring is carried out in a deoxygenated atmosphere, and there is an atmosphere control part 3 in between the growing part 2 where the starting material is accepted from the weighing part 1 while adapting its inside to the environment of the weighing and it is transferred to the growing part 2 while adapting its inside to the environment of the growing. Thus, the feed material and the growing part are not exposed to the ambient atmosphere, the feed material is continuously introduced, a high quality crystal can be obtained, and by drawing up a seed crystal a large block can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005335983(A) 申请公布日期 2005.12.08
申请号 JP20040154588 申请日期 2004.05.25
申请人 MATSUSHITA ELECTRIC WORKS LTD;MORI YUSUKE 发明人 IWAHASHI TOMOYA;SASAKI TAKATOMO;MORI YUSUKE;KAWAMURA SHIRO
分类号 C30B11/06;C30B29/38;(IPC1-7):C30B11/06 主分类号 C30B11/06
代理机构 代理人
主权项
地址