发明名称 |
Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same |
摘要 |
This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive gallium nitride-based semiconductor layer and an active layer are grown on a substrate under typical growth conditions, a second conductive gallium nitride-based semiconductor layer is grown on a polarity conversion layer containing a MgN-based single crystal and formed on the active layer, so that a polarity of the second conductive gallium nitride-based semiconductor layer is converted into an N polarity, thereby roughing a surface thereof.
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申请公布号 |
US2005269583(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20040899035 |
申请日期 |
2004.07.27 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM DONG J.;KIM JE W.;KIM SUN W.;LEE KYU H.;OH JEONG T. |
分类号 |
H01L33/02;H01L33/16;H01L33/22;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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