发明名称 Method and apparatus for electrostatically maintaining substrate flatness
摘要 An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.
申请公布号 US2005272273(A1) 申请公布日期 2005.12.08
申请号 US20050136662 申请日期 2005.05.24
申请人 SHANG QUANYUAN;ROBERTSON ROBERT M;LAW KAM S;GARDNER JAMES T 发明人 SHANG QUANYUAN;ROBERTSON ROBERT M.;LAW KAM S.;GARDNER JAMES T.
分类号 C23C14/50;C23C16/00;C23C16/458;H01L21/00;H01L21/26;H01L21/31;H01L21/324;H01L21/42;H01L21/469;H01L21/477;H01L21/683;H02N13/00;(IPC1-7):C23C16/00 主分类号 C23C14/50
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