发明名称 |
Method for manufacturing ferroelectric capacitor, method for manufacturing ferroelectric memory, ferroelectric capacitor and ferroelectric memory |
摘要 |
A method for manufacturing a ferroelectric capacitor in accordance with the present invention includes: (a) a step of forming a ferroelectric laminated body by successively laminating a lower electrode layer, a ferroelectric layer and an upper electrode layer over a base substrate; (b) a step of patterning at least the upper electrode layer and the ferroelectric layer by dry etching; (c) a step of coating a coating composition including a compound having an element composing the ferroelectric layer at least on a side wall of the ferroelectric layer; and (d) a step of thermally treating the coating composition, to crystallize the coating composition coated on the side wall of the ferroelectric layer.
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申请公布号 |
US2005272171(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20050147039 |
申请日期 |
2005.06.07 |
申请人 |
NAKAYAMA MASAO;KIJIMA TAKESHI |
发明人 |
NAKAYAMA MASAO;KIJIMA TAKESHI |
分类号 |
H01L27/105;H01L21/00;H01L21/02;H01L21/311;H01L21/3213;H01L21/8246;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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