发明名称 Method for manufacturing ferroelectric capacitor, method for manufacturing ferroelectric memory, ferroelectric capacitor and ferroelectric memory
摘要 A method for manufacturing a ferroelectric capacitor in accordance with the present invention includes: (a) a step of forming a ferroelectric laminated body by successively laminating a lower electrode layer, a ferroelectric layer and an upper electrode layer over a base substrate; (b) a step of patterning at least the upper electrode layer and the ferroelectric layer by dry etching; (c) a step of coating a coating composition including a compound having an element composing the ferroelectric layer at least on a side wall of the ferroelectric layer; and (d) a step of thermally treating the coating composition, to crystallize the coating composition coated on the side wall of the ferroelectric layer.
申请公布号 US2005272171(A1) 申请公布日期 2005.12.08
申请号 US20050147039 申请日期 2005.06.07
申请人 NAKAYAMA MASAO;KIJIMA TAKESHI 发明人 NAKAYAMA MASAO;KIJIMA TAKESHI
分类号 H01L27/105;H01L21/00;H01L21/02;H01L21/311;H01L21/3213;H01L21/8246;(IPC1-7):H01L21/00 主分类号 H01L27/105
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