| 摘要 |
AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>1-(x+y)</SUB>N(0<x<=1, 0<=y<1, x+y<=1) single-crystal wafer, characterized in that the wafer has a thickness T(cm) and a principal face with a surface area S(cm<SUP>2</SUP>), the area S and thickness T satisfying the conditions S>=10 cm<SUP>2 </SUP>and 0.006 S>=T>=0.002 S.
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