| 摘要 |
A multilayer semiconductor device in which heat dissipation properties are enhanced. A coupling lead (4) connected between an MOSFET (1) and a control IC (2) on a supporting plate (3) of the semiconductor device comprises a base body (6) having one end (6a) forming one major surface (4a) of a coupling lead (4) conductively bonded with the other major surface (1b) of the MOSFET (1) and exhibiting heat dissipation properties and conductivity, and a body to be coated (7) bonded onto one end (6a) of the base body (6) and forming the other major surface (4b) of the coupling lead (4) supporting the control IC (2) while exhibiting electric insulation and high heat transmission resistance. A current is supplied to the MOSFET (1) through the supporting plate (3) and the base body (6) of the coupling lead (4) becoming a current passage, and heat generated through operation of the MOSFET (1) is dissipated efficiently through the supporting plate (3) and the base body (6) of the coupling lead (4), thus supplying a large current to the MOSFET (1) while ensuring sufficient heat dissipation properties. |
