发明名称 IMMERSION LIQUID FOR IMMERSION EXPOSURE PROCESS AND METHOD FOR FORMING RESIST PATTERN USING SUCH IMMERSION LIQUID
摘要 <p>In an immersion exposure process, particularly in such an immersion exposure process wherein the resolution of a resist pattern in improved by performing an exposure while having a liquid with a certain thickness which has a higher refractive index than air intervene at least on a resist film in the path through which a lithography exposure light reaches the resist film, deterioration of the resist film and deterioration of the liquid in use during the immersion exposure are prevented at the same time, thereby enabling to form a high resolution resist pattern through immersion exposure. A liquid composed of a silicon-based liquid which is transparent to the exposure light used for the exposure process is used as an immersion liquid for the immersion exposure.</p>
申请公布号 WO2005117074(A1) 申请公布日期 2005.12.08
申请号 WO2005JP09477 申请日期 2005.05.24
申请人 WAKIYA, KAZUMASA;TOKYO OHKA KOGYO CO., LTD.;HIRAYAMA, TAKU;ENDO, KOTARO;YOSHIDA, MASAAKI 发明人 HIRAYAMA, TAKU;WAKIYA, KAZUMASA;ENDO, KOTARO;YOSHIDA, MASAAKI
分类号 G03F7/20;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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