发明名称 COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM, ANTIREFLECTION FILM FORMED OF THE COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM, AND METHOD FOR FORMING RESIST PATTERN BY USING THE COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition for formation of an antireflection film, the composition which is hardly volatile and has preferable coating property, in particular, which suppresses adverse influences of reflected light in exposure to light from an ArF excimer laser light source at 193 nm wavelength and has preferable coating property, and further, to provide an antireflection film formed of the above composition for formation of an antireflection film, the film having high etching characteristics and no void, and to provide a method for forming a resist pattern by using the composition for formation of an antireflection film. <P>SOLUTION: The composition for formation of an antireflection film comprises: (A) a hardly volatile light-absorbing compound; (B) a siloxane polymer; and (C) a solvent, and a product obtained by the hydrolysis of phenyl alkoxy silane is used as the component (A). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005338380(A) 申请公布日期 2005.12.08
申请号 JP20040156333 申请日期 2004.05.26
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKAHAMA AKIRA;SAKAMOTO YOSHIKANE;TANAKA TAKESHI;YAMASHITA NAOKI
分类号 G03F7/11;C08G77/26;G03F7/004;G03F7/075;H01L21/027 主分类号 G03F7/11
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