发明名称 ELECTRON EMISSION DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron emission device with an improved electrode structure and with a high contrast, high image quality and a low driving voltage. <P>SOLUTION: The electron emission device includes a first substrate 20 and a second substrate 22 opposed to each other with a predetermined space therebetween, a cathode electrode 24 formed on the first substrate 20, a gate electrode 26 formed on an insulating layer 25 on the cathode electrode 24, and an electron emission section 28 formed on the cathode electrode 24. The insulating layer 25 comprises a first insulating layer 25a formed on the cathode electrode 24 and at least one second insulating layer 25b formed partly on the first insulating layer 25a. The gate electrode 26 has a stepped portion formed along a surface of the insulating layer 25 and an inclined portion to connect upper and lower ends of the stepped portion. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005340159(A) 申请公布日期 2005.12.08
申请号 JP20040339253 申请日期 2004.11.24
申请人 SAMSUNG SDI CO LTD 发明人 HWANG SEONG-YEON
分类号 H01J9/02;H01J1/30;H01J1/304;H01J1/62;H01J29/46;H01J29/48;H01J31/12;(IPC1-7):H01J1/304 主分类号 H01J9/02
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