发明名称 HIGH-FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a high-frequency amplifier of a wide bandwidth which can be controlled by minimizing influence of a deviation of high and low impedances of a desired frequency bandwidth from an optimum impedance on an frequency bandwidth other than the desired frequency bandwidth. SOLUTION: A high-frequency power amplifier is provided with a high-frequency transistor 1, a basic wave matching circuit 7, and an impedance control circuit 9A supplying direct current to the high-frequency transistor 1 from a power supplying terminal P1 through a bias circuit 8 composed of a high harmonic processing circuit 6, a capacitor 5 for bypass, and a bias line 3 as a distributed constant line, which is composed of a serial circuit of an inductor 10 on the power supplying terminal P1 of the bias circuit 8, a capacitor 11, and resistor 12, for a desired frequency, so that low and high impedances of desired frequency bandwidths may be controlled. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005341447(A) 申请公布日期 2005.12.08
申请号 JP20040160381 申请日期 2004.05.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUGIYAMA HIROSHI;YAMAMOTO OKITERU
分类号 H03F3/60;H03F3/193;H04B1/18;(IPC1-7):H03F3/193 主分类号 H03F3/60
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