| 摘要 |
PROBLEM TO BE SOLVED: To provide a large capacitance MIM capacitor and a manufacturing method therefor. SOLUTION: A method for manufacturing an MIM capacitor includes: a process of forming a lower electrode on a semiconductor substrate; a process of sequentially forming a first dielectric film, an intermediate electrode, and a second dielectric film on the lower electrode; a process of forming an intermetal insulating film on the second dielectric film; a process of etching predetermined portions of the intermetal insulating film to form an upper electrode region and via hole regions; a process of selectively etching the second dielectric film exposed in a portion of the via hole regions to expose the intermediate electrode; and a process of forming a metal film on the upper electrode region and the via hole regions, thereby forming an upper electrode and contact plugs. COPYRIGHT: (C)2006,JPO&NCIPI
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