| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiP type semiconductor device wherein exposure height positions of through vias can be kept uniform on one side of an interposer opposite from a side where semiconductor chips are mounted. SOLUTION: A support substrate 2 for compensating the thickness of a main substrate is pasted on one principal plane of the main substrate. Thereafter, by polishing the main substrate 1, a thin substrate 6 pasted to the support substrate 2 is obtained. Then, through holes which reach the support substrate 2 are formed in the thin substrate 6, and the through holes are filled up with conductive materials to form the through vias. A wiring pattern connected to the through vias is formed on the thin substrate 6, and the semiconductor chips are mounted on the thin substrate in such a state that they are connected to the wiring pattern. From the thin substrate 6 whereon the semiconductor chips are mounted, the support substrate 2 is selectively removed by etching. COPYRIGHT: (C)2006,JPO&NCIPI
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