| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a physical quantity sensor satisfactory for detecting physical quantities, such as pressure and flow rate of fluid with high yield. SOLUTION: On a silicon substrate 10, a silicon oxide film 12 is formed on one main surface and a silicon nitride film 16 is formed by way of the silicon oxide film 14 on the other main surface. On the film 12, a resistive member 18, consisting of semiconductor and the like exhibiting a piezoresistive effect for example, is formed. Instead of the resistive member 18, an insulation member, showing piezoelectric effect or a conductive member constituting capacitance and capable of displacing may be provided. Under the resistive member 18, a penetration hole 20 is formed so as to penetrate the films 14, 16, the substrate 10 and the film 12, and to make a part of the resistance member 18 lift in the air. For forming the penetration hole 20, after forming a stress-relaxing groove in the film 16 surrounding the planned position for forming the hole 20, an opening corresponding to the hole 20 is formed on the layers of films 14, 16 and an opening is formed in the substrate 10 through wet etching using the layers as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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